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MESFET electron energy

2D Silicon MESFET

A GNU head		 MESFET eletric potential

 

A 2D Silicon MESFET has been simulated by means of Archimedes, in order to show its capabilities of simulating submicron MESFETs. This devices in made of Silicon. Archimedes takes into account all the relevant scattering machanisms in such Silicon devices.

We report, in the following, various pictures showing the results for electrons at stationary state, while it, obviously, possibile to study the transient behaviour of such device by means of Archimedes. At the end of this page, we report the ASCII input file for the simulation of this particular device.

Here, we report the electron density in the MESFET.

The energy of electrons, after 5 picoseconds, looks as in the following picture.

The electrostatic potential is reported below.

And, finally, we report the graphics for x- and y- electric field component respectively.

We report in the following the ASCII input file for the simulation of such a device by means of Archimedes.

# Silicon MESFET test-1

# www.southnovel.eu

MATERIAL SILICON
TRANSPORT MC ELECTRONS

FINALTIME 4.0e-12
TIMESTEP 0.0015e-12

XLENGTH 0.6e-6
YLENGTH 0.2e-6

XSPATIALSTEP 80
YSPATIALSTEP 40

# Definition of the doping concentration
# ======================================
DONORDENSITY 0. 0. 0.6e-6 0.2e-6 1.e23
DONORDENSITY 0. 0.15e-6 0.1e-6 0.2e-6 3.e23
DONORDENSITY 0.5e-6 0.15e-6 0.6e-6 0.2e-6 3.e23
ACCEPTORDENSITY 0. 0. 0.6e-6 0.2e-6 1.e20

# Definition of the various contacts
# ==================================
CONTACT DOWN 0.0 0.6e-6 INSULATOR 0.0
CONTACT LEFT 0.0 0.2e-6 INSULATOR 0.0
CONTACT RIGHT 0.0 0.2e-6 INSULATOR 0.0
CONTACT UP 0.1e-6 0.2e-6 INSULATOR 0.0
CONTACT UP 0.4e-6 0.5e-6 INSULATOR 0.0
CONTACT UP 0.0 0.1e-6 OHMIC 0.0 3.e23
CONTACT UP 0.2e-6 0.4e-6 SCHOTTKY -1.3
CONTACT UP 0.5e-6 0.6e-6 OHMIC 1.0 3.e23

NOQUANTUMEFFECTS
MAXIMINI
# SAVEEACHSTEP

LATTICETEMPERATURE 300.

STATISTICALWEIGHT 250
MEDIA 500

OUTPUTFORMAT GNUPLOT

# end of MESFET test-1
 

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